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| Si6924AEDQ New Product Vishay Siliconix N-Channel 2.5-V (G-S) Battery Switch, ESD Protection PRODUCT SUMMARY VDS (V) 28 rDS(on) (W) 0.033 @ VGS = 4.5 V 0.038 @ VGS = 3.0 V 0.042 @ VGS = 2.5 V ID (A) 4.6 4.3 4.1 ESD Protected 2000 V FEATURES D Low rDS(on) D VGS Max Rating: 14 V D Exceeds 2-kV ESD Protection D 28-V VDS Rated D Symetrical Voltage Blocking (Off Voltage) DESCRIPTION The Si6924AEDQ is a dual n-channel MOSFET with ESD protection and gate over-voltage protection circuitry incorporated into the MOSFET. The device is designed for use in Lithium Ion battery pack circuits. The common-drain contsruction takes advantage of the typical battery pack topology, allowing a further reduction of the device's on-resistance. The 2-stage input protection circuit is a unique design, consisting of two stages of back-to-back zener diodes separated by a resistor. The first stage diode is designed to absorb most of the ESD energy. The second stage diode is designed to protect the gate from any remaining ESD energy and over-voltages above the gates inherent safe operating range. The series resistor used to limit the current through the second stage diode during over voltage conditions has a maximum value which limits the input current to v 10 mA @ 14 V and the maximum toff to 12 ms. The Si6924AEDQ has been optimized as a battery or load switch in Lithium Ion applications with the advantage of both a 2.5-V rDS(on) rating and a safe 14-V gate-to-source maximum rating. APPLICATION CIRCUITS D ESD and Overvoltage Protection ESD and Overvoltage Protection R** G S **R typical value is 3.3 kW by design. Battery Protection Circuit See Typical Characteristics, Gate-Current vs. Gate-Source Voltage, Page 3. *Thermal connection to drain pins is required to achieve specific performance. FIGURE 1. Typical Use In a Lithium Ion Battery Pack Document Number: 72215 S-03985--Rev. A, 13-May-03 FIGURE 2. Input ESD and Overvoltage Protection Circuit. www.vishay.com 1 Si6924AEDQ Vishay Siliconix New Product FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION *D *D TSSOP-8 D S1 S1 G1 1 2 3 4 Top View Ordering Information: SI6924AEDQ-T1 N-Channel S1 N-Channel S2 D 8D 7 S2 6 S2 5 G2 3.3 kW G1 G2 3.3 kW Si6924AEDQ *Thermal connection to drain pins is required to achieve specific performance. FIGURE 3. FIGURE 4. ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage, Source-Drain Voltage Gate-Source Voltage Continuous Drain to Source Current (TJ = 150_C)a Drain-to-Source Pulsed Drain-to-Source Current Pulsed Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 10 sec 28 "14 4.6 Steady State Unit V 4.1 3.2 20 A 0.9 1.0 0.64 - 55 to 150 W _C ID IDM IS PD TJ, Tstg 3.7 1.2 1.3 0.84 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on FR4 Board. www.vishay.com Document Number: 72215 S-03985--Rev. A, 13-May-03 Steady State Steady State RthJA RthJF Symbol Typical 71 96 56 Maximum 95 125 70 Unit _C/W 2 Si6924AEDQ New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "4.5 V Gate-Body Gate Body Leakage IGSS VDS = 0 V, VGS = "14 V VDS = 22.4 V, VGS = 0 V Zero Gate Voltage Drain Current On-State Drain Currentb IDSS ID(on) VDS = 22.4 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 5 V VGS = 4.5 V, ID = 4.6 A Drain-Source On-State Resistanceb rDS(on) VGS = 3.0 V, ID = 4.3 A VGS = 2.5 V, ID = 4.1 A Forward Transconductanceb Diode Forward Voltageb gfs VSD VDS = 10 V, ID = 4.6 A IS = 1.2 A, VGS = 0 V 10 0.022 0.025 0.029 25 0.7 1.1 0.033 0.038 0.042 S V W 0.6 1.5 "1 "20 1 5 V mA mA mA A Symbol Test Condition Min Typ Max Unit Dynamica Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd td(on) tr td(off) tf VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W VDS = 10 V, VGS = 4.5 V, ID = 4.6 A 6.5 1.2 1.5 0.95 1.4 7 3.1 1.5 2.1 11 5 ms 10 nC Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate-Current vs. Gate-Source Voltage 0.020 10,000 1,000 I GSS - Gate Current (mA) 0.015 I GSS - Gate Current (mA) 100 10 1 0.1 TJ = 25_C 0.01 0.000 0 3 6 9 12 15 0.001 0 2 4 6 8 10 12 14 TJ = 150_C Gate Current vs. Gate-Source Voltage 0.010 0.005 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72215 S-03985--Rev. A, 13-May-03 www.vishay.com 3 Si6924AEDQ Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 25 VGS = 5 thru 2,5 V 20 I D - Drain Current (A) I D - Drain Current (A) 20 25 Transfer Characteristics 15 15 10 2V 10 TC = 125_C 5 5 25_C - 55_C 0 0.00 0.25 0.50 0.75 1.00 1.25 1.50 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.05 V GS - Gate-to-Source Voltage (V) 5 VDS = 10 V ID = 4.6 A Gate Charge r DS(on) - On-Resistance ( W ) 0.04 4 0.03 VGS = 2.5 V 3 0.02 VGS = 3 V VGS = 4.5 V 2 0.01 1 0.00 0 4 8 12 16 20 ID - Drain Current (A) 0 0 1 2 3 4 5 6 7 Qg - Total Gate Charge (nC) On-Resistance vs. Junction Temperature 1.8 VGS = 4.5 V ID = 4.6 A I S - Source Current (A) 10 20 Source-Drain Diode Forward Voltage r DS(on) - On-Resistance (W) (Normalized) 1.6 1.4 TJ = 150_C 1.2 1.0 TJ = 25_C 0.8 0.6 - 50 1 - 25 0 25 50 75 100 125 150 0 0.4 0.6 0.8 1.0 1.2 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) Document Number: 72215 S-03985--Rev. A, 13-May-03 www.vishay.com 4 Si6924AEDQ New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Gate-to-Source Voltage 0.10 0.4 ID = 250 mA r DS(on) - On-Resistance ( W ) 0.08 V GS(th) Variance (V) 0.2 Vishay Siliconix Threshold Voltage 0.06 ID = 4.6 A - 0.0 0.04 - 0.2 0.02 - 0.4 0.00 0 1 2 3 4 5 - 0.6 - 50 - 25 0 25 50 75 100 125 150 VGS - Gate-to-Source Voltage (V) TJ - Temperature (_C) Single Pulse Power 60 50 10 I D - Drain Current (A) 40 Power (W) 100 Limited by rDS(on) Safe Operating Area 1 ms 30 1 10 ms 100 ms 0.1 TC = 25_C Single Pulse 1s 10 s dc 20 10 0 0.001 0.01 0.1 Time (sec) 1 10 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 PDM t1 t2 1. Duty Cycle, D = t1 t2 0.02 2. Per Unit Base = RthJA = 96_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 600 Square Wave Pulse Duration (sec) Document Number: 72215 S-03985--Rev. A, 13-May-03 www.vishay.com 5 Si6924AEDQ Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 6 Document Number: 72215 S-03985--Rev. A, 13-May-03 |
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